Research output per year
Research output per year
Search results
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2023
Efficient Xe Filling of MEMS Vapor Cells Empowered by Customized Triple Stack Wafer Bond Processing
Roshanghias, A., Kaczynski, J., Rodrigues, A., Hübner, M., Zauner, M., Grosso, G., Andrianov, N., Khan, M., Grömer, T., Fuchs, T. & Binder, A., 29 Sept 2023, In: ECS Transactions.Research output: Contribution to journal › Article › peer-review
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Highly Selective Plasma Etching Technique for Molybdenum: Highly Selective Plasma Etching Technique for Molybdenum
Osipov, A., Andrianov, N., Speshilova, A., Gagaeva, A., Risquez, S., Vorobyev, A. & Alexandrov, S., 18 Feb 2023, In: Plasma Chemistry and Plasma Processing. p. 1-11 11 p.Research output: Contribution to journal › Article › peer-review
Open Access -
2021
Engineering mode coupling in a hybrid plasmon-photonic cavity for dual-band infrared spectroscopic gas sensing
Dao, T. D., Dubois, F., Spettel, J., Tortschanoff, A., Fleury, C., Cselyuszka, N., Consani, C., Nikolai, A. & Moridi, M., 15 Jun 2021, In: OSA Continuum. 4, 6, p. 1827Research output: Contribution to journal › Article › peer-review
Open AccessFile -
2018
Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation
Barsukov, Y. V., Volynets, V., Kobelev, A. A., Andrianov, N. A., Tulub, A. V. & Smirnov, A. S., Nov 2018, In: Journal of Vacuum Science & Technology A. 36, 6, p. 061301-1-061301-6 6 p.Research output: Contribution to journal › Article › peer-review
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Влияние энергии ионов при воздействии азотной плазмы на постоянные токи насыщения HEMT-транзисторов на основе нитридов III группы
Translated title of the contribution :Influence of ion energy when exposed to nitrogen plasma on the constant saturation currents of HEMT transistors based on group III nitrides Research output: Contribution to journal › Article › peer-review
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Численное моделирование режимов обработки поверхности GaN в BCl3-плазме высокочастотного индукционного разряда
Translated title of the contribution :Mechanisms of inductively coupled BCl3-plasma interaction with the GaN surface Research output: Contribution to journal › Article › peer-review
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2017
Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures
Andrianov, N. A., Kobelev, A. A., Smirnov, A. S., Barsukov, Y. V. & Zhukov, Y. M., 1 Mar 2017, In: Technical Physics. 62, 3, p. 436-440 5 p.Research output: Contribution to journal › Article › peer-review
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Исследование воздействия плазмы SF6 на поверхность НЕМТ-структур на основе GaN
Translated title of the contribution :Study of SF6 plasma treatment of GaN-НЕМТ structures Research output: Contribution to journal › Article › peer-review
Open AccessFile -
Многосеточные энергоанализаторы задерживающего потенциала для измерения функции распределения ионов по энергиям из плазмы высокочастотного емкостного разряда
Nikolai, A., 2017, In: Uspekhi Prikladnoi Fiziki. 5, 6, p. 608-617 9 p.Research output: Contribution to journal › Article › peer-review
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