TY - GEN
T1 - Vertical etching of Al0.7Sc0.3N for next generation of acoustic wave resonators
AU - Terzic, Tamara
AU - Andrianov, Nikolai
AU - Chouiki, Mustapha
AU - Solonenko, Dmytro
AU - De Pastina, Annalisa
AU - Pashchenko, Vladimir
AU - Risquez, Sarah
PY - 2023/10/2
Y1 - 2023/10/2
N2 - Due to their enhanced piezoelectric coefficient, aluminum scandium nitride thin films have been a promising piezoelectric material for MEMS, in particular for RF filters applications. Resonators based on this material present strong microfabrication challenges, especially in applications where partial etching of the piezoelectric AlScN is necessary, such as hybrid SAW/BAW devices. This work compares different AlScN etching techniques, with the aim of achieving smooth fully or partially etched surfaces, nearly vertical sidewalls, and high selectivity towards the mask material.
AB - Due to their enhanced piezoelectric coefficient, aluminum scandium nitride thin films have been a promising piezoelectric material for MEMS, in particular for RF filters applications. Resonators based on this material present strong microfabrication challenges, especially in applications where partial etching of the piezoelectric AlScN is necessary, such as hybrid SAW/BAW devices. This work compares different AlScN etching techniques, with the aim of achieving smooth fully or partially etched surfaces, nearly vertical sidewalls, and high selectivity towards the mask material.
KW - AlN
KW - AlScN
KW - Wet Etching
KW - Dry Etching
KW - acoustic wave resonators
U2 - 10.1109/DTIP58682.2023.10267940
DO - 10.1109/DTIP58682.2023.10267940
M3 - Conference Paper
BT - 2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP)
ER -