Abstract
Thin film aluminum nitride on insulator (AlNOI) has gained attention as a promising material platform for integrated photonic circuits (PICs) due to its ability to operate over a wide spectral range covering the ultra-violet to mid-infrared regions, while enabling a broad range of passive photonic functionalities. This study aims to optimize sputtered AlNOI films for PICs, with an emphasis on the spectroscopic ellipsometry study over a range from 0.19 μm to 25 μm. Furthermore, we discuss our approach for fabricating AlNOI PICs components, with a particular focus on optimizing the etching process to attain smooth sidewall waveguides.
Original language | English |
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Title of host publication | EPJ Web of Conferences |
Volume | 287 |
Publication status | Published - 2023 |