Chemically enhanced dry etching of Al0.7Sc0.3N for MEMS applications

Nikolai Andrianov; Annalisa De Pastina; Sarah Risquez; Mohssen Moridi

Chemically enhanced dry etching of Al0.7Sc0.3N for MEMS applications

Nikolai Andrianov, Annalisa De Pastina, Sarah Risquez, Mohssen Moridi

Research output: Contribution to conference (No Proceedings) › Paper › peer-review

Abstract

In the present work, we investigate the effect of substrate temperature and RF bias power on the dry etching process of Al0.7Sc0.3N thin films. Increasing the substrate temperature from 100°C to 180°C, the etching rate is enhanced by 3-fold along with a slight improvement of sidewall verticality. Capacitively Coupled Power (CCP) was found to have outstanding impact on both etching rate and sidewall angle. Indeed, at CCP of 400 W and 180°C, a steep sidewall angle of 74° and etching rate >120 nm/min are achieved via the optimal process conditions.
This is, to our knowledge, the best result achieved so far for this level of scandium content, and constitutes a remarkable technological advance for the microfabrication of Al0.7Sc0.3N based MEMS devices.

Original language	English
Publication status	Published - 21 Sept 2022
Event	(Accepted/In press) 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES). - Duration: 19 Sept 2022 → 23 Sept 2022 https://mne2022.org/

Conference

Conference	(Accepted/In press) 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES).
Period	19/09/22 → 23/09/22
Internet address	https://mne2022.org/

Keywords

Dry etching, III-N, Plasma

Cite this

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title = "Chemically enhanced dry etching of Al0.7Sc0.3N for MEMS applications",

abstract = "In the present work, we investigate the effect of substrate temperature and RF bias power on the dry etching process of Al0.7Sc0.3N thin films. Increasing the substrate temperature from 100°C to 180°C, the etching rate is enhanced by 3-fold along with a slight improvement of sidewall verticality. Capacitively Coupled Power (CCP) was found to have outstanding impact on both etching rate and sidewall angle. Indeed, at CCP of 400 W and 180°C, a steep sidewall angle of 74° and etching rate >120 nm/min are achieved via the optimal process conditions.This is, to our knowledge, the best result achieved so far for this level of scandium content, and constitutes a remarkable technological advance for the microfabrication of Al0.7Sc0.3N based MEMS devices.",

keywords = "Dry etching, III-N, Plasma",

author = "Nikolai Andrianov and {De Pastina}, Annalisa and Sarah Risquez and Mohssen Moridi",

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language = "English",

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TY - CONF

T1 - Chemically enhanced dry etching of Al0.7Sc0.3N for MEMS applications

AU - Andrianov, Nikolai

AU - De Pastina, Annalisa

AU - Risquez, Sarah

AU - Moridi, Mohssen

PY - 2022/9/21

Y1 - 2022/9/21

N2 - In the present work, we investigate the effect of substrate temperature and RF bias power on the dry etching process of Al0.7Sc0.3N thin films. Increasing the substrate temperature from 100°C to 180°C, the etching rate is enhanced by 3-fold along with a slight improvement of sidewall verticality. Capacitively Coupled Power (CCP) was found to have outstanding impact on both etching rate and sidewall angle. Indeed, at CCP of 400 W and 180°C, a steep sidewall angle of 74° and etching rate >120 nm/min are achieved via the optimal process conditions.This is, to our knowledge, the best result achieved so far for this level of scandium content, and constitutes a remarkable technological advance for the microfabrication of Al0.7Sc0.3N based MEMS devices.

AB - In the present work, we investigate the effect of substrate temperature and RF bias power on the dry etching process of Al0.7Sc0.3N thin films. Increasing the substrate temperature from 100°C to 180°C, the etching rate is enhanced by 3-fold along with a slight improvement of sidewall verticality. Capacitively Coupled Power (CCP) was found to have outstanding impact on both etching rate and sidewall angle. Indeed, at CCP of 400 W and 180°C, a steep sidewall angle of 74° and etching rate >120 nm/min are achieved via the optimal process conditions.This is, to our knowledge, the best result achieved so far for this level of scandium content, and constitutes a remarkable technological advance for the microfabrication of Al0.7Sc0.3N based MEMS devices.

KW - Dry etching, III-N, Plasma

UR - https://event.mne2022.exordo.com/presentation/424/chemically-enhanced-dry-etching-of-al07sc03n-for-mems-applications

M3 - Paper

T2 - (Accepted/In press) 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES).

Y2 - 19 September 2022 through 23 September 2022

ER -

Chemically enhanced dry etching of Al0.7Sc0.3N for MEMS applications

Abstract

Conference

Keywords

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