Chemically enhanced dry etching of Al0.7Sc0.3N for MEMS applications

Nikolai Andrianov, Annalisa De Pastina, Sarah Risquez, Mohssen Moridi

Publikation: KonferenzbeitragPapierBegutachtung

Abstract

In the present work, we investigate the effect of substrate temperature and RF bias power on the dry etching process of Al0.7Sc0.3N thin films. Increasing the substrate temperature from 100°C to 180°C, the etching rate is enhanced by 3-fold along with a slight improvement of sidewall verticality. Capacitively Coupled Power (CCP) was found to have outstanding impact on both etching rate and sidewall angle. Indeed, at CCP of 400 W and 180°C, a steep sidewall angle of 74° and etching rate >120 nm/min are achieved via the optimal process conditions.
This is, to our knowledge, the best result achieved so far for this level of scandium content, and constitutes a remarkable technological advance for the microfabrication of Al0.7Sc0.3N based MEMS devices.
OriginalspracheEnglisch
PublikationsstatusVeröffentlicht - 21 Sep. 2022
Veranstaltung (Accepted/In press) 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES). -
Dauer: 19 Sep. 202223 Sep. 2022
https://mne2022.org/

Konferenz

Konferenz (Accepted/In press) 48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES).
Zeitraum19/09/2223/09/22
Internetadresse

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