BCl3 Plasma Treatment Effect on Ohmic Contact Resistance in GaN-Based High Electron Mobility Transistors

Andrianov Nikolai

doi:10.1109/IVESC.2014.6892008

BCl3 Plasma Treatment Effect on Ohmic Contact Resistance in GaN-Based High Electron Mobility Transistors

Research output: Contribution to conference (No Proceedings) › Paper › peer-review

Abstract

In present work chemical model describing mechanism of GaN etching and mechanism of Ga-rich layer formation
in process of BCl3 plasma treatment of GaN surface is proposed
and included to plasma simulation of this process. Numerical
results are compared with experimentally measured dependence
of ohmic contact resistance on the ICP parameters used in
simulation.

Original language	English
Pages	978-1-4799-5772-9/14
Number of pages	2
DOIs	https://doi.org/10.1109/IVESC.2014.6892008
Publication status	Published - 4 Jul 2014

Keywords

GaN surface
BCl3 plasma chemistry
Ohmic contacts

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10.1109/IVESC.2014.6892008

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title = "BCl3 Plasma Treatment Effect on Ohmic Contact Resistance in GaN-Based High Electron Mobility Transistors",

abstract = "In present work chemical model describing mechanism of GaN etching and mechanism of Ga-rich layer formationin process of BCl3 plasma treatment of GaN surface is proposedand included to plasma simulation of this process. Numericalresults are compared with experimentally measured dependenceof ohmic contact resistance on the ICP parameters used insimulation.",

keywords = "GaN surface, BCl3 plasma chemistry, Ohmic contacts",

author = "Andrianov Nikolai",

year = "2014",

month = jul,

day = "4",

doi = "10.1109/IVESC.2014.6892008",

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T1 - BCl3 Plasma Treatment Effect on Ohmic Contact Resistance in GaN-Based High Electron Mobility Transistors

AU - Nikolai, Andrianov

PY - 2014/7/4

Y1 - 2014/7/4

N2 - In present work chemical model describing mechanism of GaN etching and mechanism of Ga-rich layer formationin process of BCl3 plasma treatment of GaN surface is proposedand included to plasma simulation of this process. Numericalresults are compared with experimentally measured dependenceof ohmic contact resistance on the ICP parameters used insimulation.

AB - In present work chemical model describing mechanism of GaN etching and mechanism of Ga-rich layer formationin process of BCl3 plasma treatment of GaN surface is proposedand included to plasma simulation of this process. Numericalresults are compared with experimentally measured dependenceof ohmic contact resistance on the ICP parameters used insimulation.

KW - GaN surface

KW - BCl3 plasma chemistry

KW - Ohmic contacts

UR - https://ieeexplore.ieee.org/document/6892008

U2 - 10.1109/IVESC.2014.6892008

DO - 10.1109/IVESC.2014.6892008

M3 - Paper

SP - 978-1-4799-5772-9/14

ER -

BCl3 Plasma Treatment Effect on Ohmic Contact Resistance in GaN-Based High Electron Mobility Transistors

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Keywords

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