BCl3 Plasma Treatment Effect on Ohmic Contact Resistance in GaN-Based High Electron Mobility Transistors

In present work chemical model describing mechanism of GaN etching and mechanism of Ga-rich layer formation
in process of BCl3 plasma treatment of GaN surface is proposed
and included to plasma simulation of this process. Numerical
results are compared with experimentally measured dependence
of ohmic contact resistance on the ICP parameters used in
simulation.