Stress-free bonding technology with bondable thin glass layer for MEMS based pressure sensor

Xiaodong Hu; P. Mackowiak; Yucheng Zhang; Oswin Ehrmann; Klaus-Dieter Lang; Martin Schneider-Ramelow; Ulli Hansen; Simon Maus; Oliver Gyenge; Maozhou Meng; Ha-Duong Ngo

doi:10.1109/EPTC.2017.8277550

Stress-free bonding technology with bondable thin glass layer for MEMS based pressure sensor

Xiaodong Hu, P. Mackowiak, Yucheng Zhang, Oswin Ehrmann, Klaus-Dieter Lang, Martin Schneider-Ramelow, Ulli Hansen, Simon Maus, Oliver Gyenge, Maozhou Meng, Ha-Duong Ngo

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper

Abstract

In the present work, an intermediate sodium-rich glass layer was deposited on silicon wafer by a PVD (Physical Vapor Deposition) process for further silicon to silicon anodic bonding. The anodic bonding process was carried out at low direct-current voltage of about 40 V-100 V and temperature from 320°C to 400°C. The concentration of alkali ion (sodium) in the deposited thin glass layer, the surface roughness of the thin film, and the bonding properties of the thin glass layer were studied in detail and later on this technology was used to fabricate a MEMS based pressure sensor (bonding voltage 40 V and bonding temperature 360°C). The infrared microscopy (IR) was used as the visual method to detect the bonding defects. The offset value was measured with varied temperature to check the stress issues. The purpose of the proposed method is to reduce the offset value for MEMS based pressure sensor by using the thin glass bonding layer. This novel method can be applied to the other type of MEMS sensors, which requires anodic bonding process to improve the performance.

Original language	English
Title of host publication	2017 IEEE 19th Electronics Packaging Technology Conference (EPTC)
Pages	1-6
Number of pages	6
DOIs	https://doi.org/10.1109/EPTC.2017.8277550
Publication status	Published - 9 Dec 2017
Externally published	Yes
Event	2017 IEEE 19th Electronics Packaging Technology Conference (EPTC) - Singapore Duration: 6 Dec 2017 → 9 Dec 2017

Conference

Conference	2017 IEEE 19th Electronics Packaging Technology Conference (EPTC)
Period	6/12/17 → 9/12/17

Keywords

Glass
Bonding
Silicon
Surface treatment
Substrates
Micromechanical devices
Sensors

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10.1109/EPTC.2017.8277550

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8277550

Cite this

Hu, X., Mackowiak, P., Zhang, Y., Ehrmann, O., Lang, K.-D., Schneider-Ramelow, M., Hansen, U., Maus, S., Gyenge, O., Meng, M., & Ngo, H.-D. (2017). Stress-free bonding technology with bondable thin glass layer for MEMS based pressure sensor. In 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC) (pp. 1-6). Article 8277550 https://doi.org/10.1109/EPTC.2017.8277550

@inproceedings{07dea400f8f64e60a62eea6fbe8c039f,

title = "Stress-free bonding technology with bondable thin glass layer for MEMS based pressure sensor",

abstract = "In the present work, an intermediate sodium-rich glass layer was deposited on silicon wafer by a PVD (Physical Vapor Deposition) process for further silicon to silicon anodic bonding. The anodic bonding process was carried out at low direct-current voltage of about 40 V-100 V and temperature from 320°C to 400°C. The concentration of alkali ion (sodium) in the deposited thin glass layer, the surface roughness of the thin film, and the bonding properties of the thin glass layer were studied in detail and later on this technology was used to fabricate a MEMS based pressure sensor (bonding voltage 40 V and bonding temperature 360°C). The infrared microscopy (IR) was used as the visual method to detect the bonding defects. The offset value was measured with varied temperature to check the stress issues. The purpose of the proposed method is to reduce the offset value for MEMS based pressure sensor by using the thin glass bonding layer. This novel method can be applied to the other type of MEMS sensors, which requires anodic bonding process to improve the performance.",

keywords = "Glass, Bonding, Silicon, Surface treatment, Substrates, Micromechanical devices, Sensors",

author = "Xiaodong Hu and P. Mackowiak and Yucheng Zhang and Oswin Ehrmann and Klaus-Dieter Lang and Martin Schneider-Ramelow and Ulli Hansen and Simon Maus and Oliver Gyenge and Maozhou Meng and Ha-Duong Ngo",

year = "2017",

month = dec,

day = "9",

doi = "10.1109/EPTC.2017.8277550",

language = "English",

isbn = "978-1-5386-3043-3",

pages = "1--6",

booktitle = "2017 IEEE 19th Electronics Packaging Technology Conference (EPTC)",

note = "2017 IEEE 19th Electronics Packaging Technology Conference (EPTC) ; Conference date: 06-12-2017 Through 09-12-2017",

}

Hu, X, Mackowiak, P, Zhang, Y, Ehrmann, O, Lang, K-D, Schneider-Ramelow, M, Hansen, U, Maus, S, Gyenge, O, Meng, M & Ngo, H-D 2017, Stress-free bonding technology with bondable thin glass layer for MEMS based pressure sensor. in 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC)., 8277550, pp. 1-6, 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC), 6/12/17. https://doi.org/10.1109/EPTC.2017.8277550

TY - GEN

T1 - Stress-free bonding technology with bondable thin glass layer for MEMS based pressure sensor

AU - Hu, Xiaodong

AU - Mackowiak, P.

AU - Zhang, Yucheng

AU - Ehrmann, Oswin

AU - Lang, Klaus-Dieter

AU - Schneider-Ramelow, Martin

AU - Hansen, Ulli

AU - Maus, Simon

AU - Gyenge, Oliver

AU - Meng, Maozhou

AU - Ngo, Ha-Duong

PY - 2017/12/9

Y1 - 2017/12/9

N2 - In the present work, an intermediate sodium-rich glass layer was deposited on silicon wafer by a PVD (Physical Vapor Deposition) process for further silicon to silicon anodic bonding. The anodic bonding process was carried out at low direct-current voltage of about 40 V-100 V and temperature from 320°C to 400°C. The concentration of alkali ion (sodium) in the deposited thin glass layer, the surface roughness of the thin film, and the bonding properties of the thin glass layer were studied in detail and later on this technology was used to fabricate a MEMS based pressure sensor (bonding voltage 40 V and bonding temperature 360°C). The infrared microscopy (IR) was used as the visual method to detect the bonding defects. The offset value was measured with varied temperature to check the stress issues. The purpose of the proposed method is to reduce the offset value for MEMS based pressure sensor by using the thin glass bonding layer. This novel method can be applied to the other type of MEMS sensors, which requires anodic bonding process to improve the performance.

AB - In the present work, an intermediate sodium-rich glass layer was deposited on silicon wafer by a PVD (Physical Vapor Deposition) process for further silicon to silicon anodic bonding. The anodic bonding process was carried out at low direct-current voltage of about 40 V-100 V and temperature from 320°C to 400°C. The concentration of alkali ion (sodium) in the deposited thin glass layer, the surface roughness of the thin film, and the bonding properties of the thin glass layer were studied in detail and later on this technology was used to fabricate a MEMS based pressure sensor (bonding voltage 40 V and bonding temperature 360°C). The infrared microscopy (IR) was used as the visual method to detect the bonding defects. The offset value was measured with varied temperature to check the stress issues. The purpose of the proposed method is to reduce the offset value for MEMS based pressure sensor by using the thin glass bonding layer. This novel method can be applied to the other type of MEMS sensors, which requires anodic bonding process to improve the performance.

KW - Glass

KW - Bonding

KW - Silicon

KW - Surface treatment

KW - Substrates

KW - Micromechanical devices

KW - Sensors

UR - https://ieeexplore.ieee.org/document/8277550/

U2 - 10.1109/EPTC.2017.8277550

DO - 10.1109/EPTC.2017.8277550

M3 - Conference Paper

SN - 978-1-5386-3043-3

SP - 1

EP - 6

BT - 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC)

T2 - 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC)

Y2 - 6 December 2017 through 9 December 2017

ER -

Stress-free bonding technology with bondable thin glass layer for MEMS based pressure sensor

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Keywords

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