Original language | English |
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Journal | Microelectronics Reliability |
DOIs | |
Publication status | Published - 2013 |
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications
C. Fleury, R. Zhytnytska, S. Bychikhin, M. Cappriotti, O. Hilt, D. Visalli, G. Meneghesso, E. Zanoni, J. Würfl, J. Derluyn, G. Strasser, D. Pogany
Research output: Contribution to journal › Article › peer-review