Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleury, R. Zhytnytska, S. Bychikhin, M. Cappriotti, O. Hilt, D. Visalli, G. Meneghesso, E. Zanoni, J. Würfl, J. Derluyn, G. Strasser, D. Pogany

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish
    JournalMicroelectronics Reliability
    DOIs
    Publication statusPublished - 2013

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