Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleury; R. Zhytnytska; S. Bychikhin; M. Cappriotti; O. Hilt; D. Visalli; G. Meneghesso; E. Zanoni; J. Würfl; J. Derluyn; G. Strasser; D. Pogany

doi:10.1016/j.microrel.2013.07.117

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleury, R. Zhytnytska, S. Bychikhin, M. Cappriotti, O. Hilt, D. Visalli, G. Meneghesso, E. Zanoni, J. Würfl, J. Derluyn, G. Strasser, D. Pogany

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Fachzeitschrift	Microelectronics Reliability
DOIs	https://doi.org/10.1016/j.microrel.2013.07.117
Publikationsstatus	Veröffentlicht - 2013

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10.1016/j.microrel.2013.07.117

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http://www.scopus.com/inward/record.url?eid=2-s2.0-84885956830&partnerID=MN8TOARS

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title = "Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications",

author = "C. Fleury and R. Zhytnytska and S. Bychikhin and M. Cappriotti and O. Hilt and D. Visalli and G. Meneghesso and E. Zanoni and J. W{\"u}rfl and J. Derluyn and G. Strasser and D. Pogany",

year = "2013",

doi = "10.1016/j.microrel.2013.07.117",

language = "English",

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TY - JOUR

T1 - Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

AU - Fleury, C.

AU - Zhytnytska, R.

AU - Bychikhin, S.

AU - Cappriotti, M.

AU - Hilt, O.

AU - Visalli, D.

AU - Meneghesso, G.

AU - Zanoni, E.

AU - Würfl, J.

AU - Derluyn, J.

AU - Strasser, G.

AU - Pogany, D.

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84885956830&partnerID=MN8TOARS

U2 - 10.1016/j.microrel.2013.07.117

DO - 10.1016/j.microrel.2013.07.117

M3 - Article

SN - 0026-2714

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -