Raman spectroscopy for thermal characterization of semiconductor devices

Martin De Biasio; Thomas Arnold; Clement Fleury; Dmytro Solonenko

doi:10.1117/12.2682223

Raman spectroscopy for thermal characterization of semiconductor devices

Martin De Biasio, Thomas Arnold, Clement Fleury, Dmytro Solonenko

Research output: Contribution to journal › Conference article › peer-review

Abstract

Raman spectroscopy was used to measure the temperature of semiconductor test structures. The structures consist of molybdenum microwires on a Si (100) substrate buried under a 270nm layer of aluminum nitride. The temperature-dependent Raman spectra of the examined materials were measured in a temperature range from 30 °C to 450 °C using a scientific grade temperature stage for calibration. The relationship between the structure’s temperature and its Raman peak position was modeled. This model was used to estimate the temperature distribution across the test structure at different operating powers with high spatial and temperature resolution.

Original language	American English
Journal	Next-Generation Spectroscopic Technologies XV
DOIs	https://doi.org/10.1117/12.2682223
Publication status	Published - 15 Jun 2023

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10.1117/12.2682223

Cite this

@article{4d854e30a8c04d73bedaae55e453e61b,

title = "Raman spectroscopy for thermal characterization of semiconductor devices",

abstract = "Raman spectroscopy was used to measure the temperature of semiconductor test structures. The structures consist of molybdenum microwires on a Si (100) substrate buried under a 270nm layer of aluminum nitride. The temperature-dependent Raman spectra of the examined materials were measured in a temperature range from 30 °C to 450 °C using a scientific grade temperature stage for calibration. The relationship between the structure{\textquoteright}s temperature and its Raman peak position was modeled. This model was used to estimate the temperature distribution across the test structure at different operating powers with high spatial and temperature resolution.",

author = "{De Biasio}, Martin and Thomas Arnold and Clement Fleury and Dmytro Solonenko",

year = "2023",

month = jun,

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doi = "10.1117/12.2682223",

language = "Englisch (Amerika)",

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T1 - Raman spectroscopy for thermal characterization of semiconductor devices

AU - De Biasio, Martin

AU - Arnold, Thomas

AU - Fleury, Clement

AU - Solonenko, Dmytro

PY - 2023/6/15

Y1 - 2023/6/15

N2 - Raman spectroscopy was used to measure the temperature of semiconductor test structures. The structures consist of molybdenum microwires on a Si (100) substrate buried under a 270nm layer of aluminum nitride. The temperature-dependent Raman spectra of the examined materials were measured in a temperature range from 30 °C to 450 °C using a scientific grade temperature stage for calibration. The relationship between the structure’s temperature and its Raman peak position was modeled. This model was used to estimate the temperature distribution across the test structure at different operating powers with high spatial and temperature resolution.

AB - Raman spectroscopy was used to measure the temperature of semiconductor test structures. The structures consist of molybdenum microwires on a Si (100) substrate buried under a 270nm layer of aluminum nitride. The temperature-dependent Raman spectra of the examined materials were measured in a temperature range from 30 °C to 450 °C using a scientific grade temperature stage for calibration. The relationship between the structure’s temperature and its Raman peak position was modeled. This model was used to estimate the temperature distribution across the test structure at different operating powers with high spatial and temperature resolution.

U2 - 10.1117/12.2682223

DO - 10.1117/12.2682223

M3 - Konferenzartikel

JO - Next-Generation Spectroscopic Technologies XV

JF - Next-Generation Spectroscopic Technologies XV

ER -