Original language | Undefined/Unknown |
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Journal | Microelectronics Reliability |
DOIs | |
Publication status | Published - 2016 |
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure
M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A. Knauer, J. Würfl, I. Rossetto, E. Zanoni, G. Meneghesso, S. Dalcanale
Research output: Contribution to journal › Article › peer-review