Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

M. Meneghini; O. Hilt; C. Fleury; R. Silvestri; M. Capriotti; G. Strasser; D. Pogany; E. Bahat-Treidel; F. Brunner; A. Knauer; J. Würfl; I. Rossetto; E. Zanoni; G. Meneghesso; S. Dalcanale

doi:10.1016/j.microrel.2015.11.026

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti, G. Strasser, D. Pogany, E. Bahat-Treidel, F. Brunner, A. Knauer, J. Würfl, I. Rossetto, E. Zanoni, G. Meneghesso, S. Dalcanale

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	undefiniert/unbekannt
Fachzeitschrift	Microelectronics Reliability
DOIs	https://doi.org/10.1016/j.microrel.2015.11.026
Publikationsstatus	Veröffentlicht - 2016

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10.1016/j.microrel.2015.11.026

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http://www.scopus.com/inward/record.url?eid=2-s2.0-84949255830&partnerID=MN8TOARS

Dieses zitieren

Meneghini, M., Hilt, O., Fleury, C., Silvestri, R., Capriotti, M., Strasser, G., Pogany, D., Bahat-Treidel, E., Brunner, F., Knauer, A., Würfl, J., Rossetto, I., Zanoni, E., Meneghesso, G., & Dalcanale, S. (2016). Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2015.11.026

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title = "Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure",

author = "M. Meneghini and O. Hilt and C. Fleury and R. Silvestri and M. Capriotti and G. Strasser and D. Pogany and E. Bahat-Treidel and F. Brunner and A. Knauer and J. W{\"u}rfl and I. Rossetto and E. Zanoni and G. Meneghesso and S. Dalcanale",

year = "2016",

doi = "10.1016/j.microrel.2015.11.026",

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Meneghini, M, Hilt, O, Fleury, C, Silvestri, R, Capriotti, M, Strasser, G, Pogany, D, Bahat-Treidel, E, Brunner, F, Knauer, A, Würfl, J, Rossetto, I, Zanoni, E, Meneghesso, G & Dalcanale, S 2016, 'Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure', Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2015.11.026

TY - JOUR

T1 - Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

AU - Meneghini, M.

AU - Hilt, O.

AU - Fleury, C.

AU - Silvestri, R.

AU - Capriotti, M.

AU - Strasser, G.

AU - Pogany, D.

AU - Bahat-Treidel, E.

AU - Brunner, F.

AU - Knauer, A.

AU - Würfl, J.

AU - Rossetto, I.

AU - Zanoni, E.

AU - Meneghesso, G.

AU - Dalcanale, S.

PY - 2016

Y1 - 2016

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84949255830&partnerID=MN8TOARS

U2 - 10.1016/j.microrel.2015.11.026

DO - 10.1016/j.microrel.2015.11.026

M3 - Artikel

SN - 0026-2714

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -