Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Benjamin P. L. Reid, Claudius Kocher, Tongtong Zhu, Fabrice Oehler, Christopher C. S. Chan, Rachel A. Oliver, Robert A. Taylor

Research output: Contribution to journalArticlepeer-review

Abstract

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.
Original languageAmerican English
Pages (from-to)171108
Number of pages1
JournalApplied Physics Letters
Volume106
Issue number17
DOIs
Publication statusPublished - 1 Apr 2015
Externally publishedYes

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