Abstract
Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.
Original language | American English |
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Pages (from-to) | 171108 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1 Apr 2015 |
Externally published | Yes |