Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Benjamin P. L. Reid; Claudius Kocher; Tongtong Zhu; Fabrice Oehler; Christopher C. S. Chan; Rachel A. Oliver; Robert A. Taylor

doi:10.1063/1.4919656

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Benjamin P. L. Reid, Claudius Kocher, Tongtong Zhu, Fabrice Oehler, Christopher C. S. Chan, Rachel A. Oliver, Robert A. Taylor

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Abstract

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

Originalsprache	Englisch (Amerika)
Seiten (von - bis)	171108
Seitenumfang	1
Fachzeitschrift	Applied Physics Letters
Jahrgang	106
Ausgabenummer	17
DOIs	https://doi.org/10.1063/1.4919656
Publikationsstatus	Veröffentlicht - 1 Apr. 2015
Extern publiziert	Ja

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10.1063/1.4919656

https://doi.org/10.1063%2F1.4919656

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title = "Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization",

abstract = "Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.",

author = "Reid, {Benjamin P. L.} and Claudius Kocher and Tongtong Zhu and Fabrice Oehler and Chan, {Christopher C. S.} and Oliver, {Rachel A.} and Taylor, {Robert A.}",

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doi = "10.1063/1.4919656",

language = "Englisch (Amerika)",

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T1 - Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

AU - Reid, Benjamin P. L.

AU - Kocher, Claudius

AU - Zhu, Tongtong

AU - Oehler, Fabrice

AU - Chan, Christopher C. S.

AU - Oliver, Rachel A.

AU - Taylor, Robert A.

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

AB - Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

U2 - 10.1063/1.4919656

DO - 10.1063/1.4919656

M3 - Artikel

SN - 0003-6951

VL - 106

SP - 171108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Abstract

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