New Developments with Magnetic Tunnel Junctions

Hubert Brückl, Andy Thomas, Jörg Schotter, Jan Bornemeier, Günter Reiss

Research output: Conference proceeding/Chapter in Book/Report/Chapter

Abstract

Besides sensors, magnetic random access memory (MRAM) and hard disk read heads, much more possible applications are still ahead for the new magnetoelectronic effects of magnetic tunnel junctions (MTJs), e.g. in logic or biochips. While the technology has improved within the recent years, the reliable fabrication of MTJs with magnetoresistance ratios of up to 50% at room temperature made it possible to extend the efforts towards new developments. Thus, MTJs with two or more barriers in the film stack provide both the realization of new devices like multivalent logic and the improvement of the bias stability and magnetoresistance ratio at larger voltages. The influence of ballistic effects, resonant states and spin accumulation are experimentally investigated and estimated by numerical solution of the Schrödinger equation for double barrier systems. Besides new applications in logic devices, MTJs are promising sensors for magnetoresistive biochips, which are capable to detect even single molecules like DNA by functionalized magnetic markers. The principle and design of magnetoresistive biochips are presented, and their performance compared to the established fluorescent method.
Original languageEnglish
Title of host publicationAdvances in Solid State Physics
Pages397-412
ISBN (Electronic)1617-5034
DOIs
Publication statusPublished - 29 Jul 2003
Externally publishedYes

Publication series

NameAdvances in Solid State Physics
Volume43
ISSN (Print)1438-4329
ISSN (Electronic)1617-5034

Fingerprint

Dive into the research topics of 'New Developments with Magnetic Tunnel Junctions'. Together they form a unique fingerprint.

Cite this