Original language | Undefined/Unknown |
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Journal | Journal of Applied Physics |
DOIs | |
Publication status | Published - 2015 |
Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states
M. Capriotti, P. Lagger, C. Fleury, M. Oposich, O. Bethge, C. Ostermaier, G. Strasser, D. Pogany
Research output: Contribution to journal › Article › peer-review