Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

M. Capriotti; P. Lagger; C. Fleury; M. Oposich; O. Bethge; C. Ostermaier; G. Strasser; D. Pogany

doi:10.1063/1.4905945

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

M. Capriotti, P. Lagger, C. Fleury, M. Oposich, O. Bethge, C. Ostermaier, G. Strasser, D. Pogany

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	undefiniert/unbekannt
Fachzeitschrift	Journal of Applied Physics
DOIs	https://doi.org/10.1063/1.4905945
Publikationsstatus	Veröffentlicht - 2015

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10.1063/1.4905945

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title = "Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states",

author = "M. Capriotti and P. Lagger and C. Fleury and M. Oposich and O. Bethge and C. Ostermaier and G. Strasser and D. Pogany",

year = "2015",

doi = "10.1063/1.4905945",

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TY - JOUR

T1 - Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

AU - Capriotti, M.

AU - Lagger, P.

AU - Fleury, C.

AU - Oposich, M.

AU - Bethge, O.

AU - Ostermaier, C.

AU - Strasser, G.

AU - Pogany, D.

PY - 2015

Y1 - 2015

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84923668537&partnerID=MN8TOARS

U2 - 10.1063/1.4905945

DO - 10.1063/1.4905945

M3 - Artikel

SN - 0021-8979

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -