Is AlN/Sapphire bilayer structure an alternative to langasite for ultra-high-temperature SAW applications?

Thierry Aubert, Omar Elmazria, Jochen Bardong, Gudrun Bruckner, Badreddine Assouar

Research output: Conference proceeding/Chapter in Book/Report/Conference Paperpeer-review

Abstract

This paper explores the potentiality to use AlN/sapphire structure as alternative piezoelectric material to langasite (LGS) for high-temperature SAW applications. In situ SAW measurements performed in vacuum up to 1050°C attest that AlN/Sapphire is more stable than LGS in such conditions. While in the case of LGS, the signal is completely lost after 8 hours at 1050°C, the device based on AlN/sapphire stays alive for 60 hours at this extreme temperature. Moreover, the degradation is attributed not to AlN but to the agglomeration phenomena undergone by the Iridium IDTs. The AlN/Sapphire structure shows also, between room temperature and at least 1050°C, a great sensitivity to temperature as well as a good linearity, which is very suitable for temperature sensor applications.
Original languageEnglish
Title of host publication2011 IEEE International Ultrasonics Symposium
Pages2082-2085
Number of pages4
DOIs
Publication statusPublished - 21 Oct 2011
Externally publishedYes
Event2011 IEEE International Ultrasonics Symposium - Orlando, FL, USA
Duration: 18 Oct 201121 Oct 2011

Conference

Conference2011 IEEE International Ultrasonics Symposium
Period18/10/1121/10/11

Keywords

  • Temperature sensors
  • Surface acoustic wave devices
  • Surface acoustic waves
  • Substrates
  • Films
  • Temperature measurement
  • Delay lines

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