Abstract
This paper explores the potentiality to use AlN/sapphire structure as alternative piezoelectric material to langasite (LGS) for high-temperature SAW applications. In situ SAW measurements performed in vacuum up to 1050°C attest that AlN/Sapphire is more stable than LGS in such conditions. While in the case of LGS, the signal is completely lost after 8 hours at 1050°C, the device based on AlN/sapphire stays alive for 60 hours at this extreme temperature. Moreover, the degradation is attributed not to AlN but to the agglomeration phenomena undergone by the Iridium IDTs. The AlN/Sapphire structure shows also, between room temperature and at least 1050°C, a great sensitivity to temperature as well as a good linearity, which is very suitable for temperature sensor applications.
Originalsprache | Englisch |
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Titel | 2011 IEEE International Ultrasonics Symposium |
Seiten | 2082-2085 |
Seitenumfang | 4 |
DOIs | |
Publikationsstatus | Veröffentlicht - 21 Okt. 2011 |
Extern publiziert | Ja |
Veranstaltung | 2011 IEEE International Ultrasonics Symposium - Orlando, FL, USA Dauer: 18 Okt. 2011 → 21 Okt. 2011 |
Konferenz
Konferenz | 2011 IEEE International Ultrasonics Symposium |
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Zeitraum | 18/10/11 → 21/10/11 |