Improvement of smooth surface of RuO<inf>2</inf> bottom electrode on Al<inf>2</inf>O<inf>3</inf> buffer layer and characteristics of RuO<inf>2</inf>/TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf>/RuO<inf>2</inf> capacitors

T. Sawada; T. Nabatame; T.D. Dao; I. Yamamoto; K. Kurishima; T. Onaya; A. Ohi; K. Ito; M. Takahashi; K. Kohama; T. Ohishi; A. Ogura; T. Nagao

doi:10.1116/1.4998425

Improvement of smooth surface of RuO<inf>2</inf> bottom electrode on Al<inf>2</inf>O<inf>3</inf> buffer layer and characteristics of RuO<inf>2</inf>/TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf>/RuO<inf>2</inf> capacitors

T. Sawada, T. Nabatame, T.D. Dao, I. Yamamoto, K. Kurishima, T. Onaya, A. Ohi, K. Ito, M. Takahashi, K. Kohama, T. Ohishi, A. Ogura, T. Nagao

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
DOIs	https://doi.org/10.1116/1.4998425
Publication status	Published - 2017

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10.1116/1.4998425

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Sawada, T., Nabatame, T., Dao, T. D., Yamamoto, I., Kurishima, K., Onaya, T., Ohi, A., Ito, K., Takahashi, M., Kohama, K., Ohishi, T., Ogura, A., & Nagao, T. (2017). Improvement of smooth surface of RuO<inf>2</inf> bottom electrode on Al<inf>2</inf>O<inf>3</inf> buffer layer and characteristics of RuO<inf>2</inf>/TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf>/RuO<inf>2</inf> capacitors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. https://doi.org/10.1116/1.4998425

@article{ecc1731be46e42ed9c3b25448a0f12b7,

title = "Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors",

author = "T. Sawada and T. Nabatame and T.D. Dao and I. Yamamoto and K. Kurishima and T. Onaya and A. Ohi and K. Ito and M. Takahashi and K. Kohama and T. Ohishi and A. Ogura and T. Nagao",

year = "2017",

doi = "10.1116/1.4998425",

language = "undefiniert/unbekannt",

}

Sawada, T, Nabatame, T, Dao, TD, Yamamoto, I, Kurishima, K, Onaya, T, Ohi, A, Ito, K, Takahashi, M, Kohama, K, Ohishi, T, Ogura, A & Nagao, T 2017, 'Improvement of smooth surface of RuO<inf>2</inf> bottom electrode on Al<inf>2</inf>O<inf>3</inf> buffer layer and characteristics of RuO<inf>2</inf>/TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf>/RuO<inf>2</inf> capacitors', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. https://doi.org/10.1116/1.4998425

Improvement of smooth surface of RuO<inf>2</inf> bottom electrode on Al<inf>2</inf>O<inf>3</inf> buffer layer and characteristics of RuO<inf>2</inf>/TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf>/RuO<inf>2</inf> capacitors. / Sawada, T.; Nabatame, T.; Dao, T.D. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2017.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

AU - Sawada, T.

AU - Nabatame, T.

AU - Dao, T.D.

AU - Yamamoto, I.

AU - Kurishima, K.

AU - Onaya, T.

AU - Ohi, A.

AU - Ito, K.

AU - Takahashi, M.

AU - Kohama, K.

AU - Ohishi, T.

AU - Ogura, A.

AU - Nagao, T.

PY - 2017

Y1 - 2017

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85027249433&partnerID=MN8TOARS

U2 - 10.1116/1.4998425

DO - 10.1116/1.4998425

M3 - Artikel

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

ER -

Sawada T, Nabatame T, Dao TD, Yamamoto I, Kurishima K, Onaya T et al. Improvement of smooth surface of RuO<inf>2</inf> bottom electrode on Al<inf>2</inf>O<inf>3</inf> buffer layer and characteristics of RuO<inf>2</inf>/TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf>/RuO<inf>2</inf> capacitors. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2017. doi: 10.1116/1.4998425

Improvement of smooth surface of RuO<inf>2</inf> bottom electrode on Al<inf>2</inf>O<inf>3</inf> buffer layer and characteristics of RuO<inf>2</inf>/TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/TiO<inf>2</inf>/RuO<inf>2</inf> capacitors

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