High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleury; M. Capriotti; M. Rigato; O. Hilt; J. Würfl; J. Derluyn; S. Steinhauer; A. Köck; G. Strasser; D. Pogany

doi:10.1016/j.microrel.2015.06.010

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleury, M. Capriotti, M. Rigato, O. Hilt, J. Würfl, J. Derluyn, S. Steinhauer, A. Köck, G. Strasser, D. Pogany

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronics Reliability
DOIs	https://doi.org/10.1016/j.microrel.2015.06.010
Publication status	Published - 2015

Access to Document

10.1016/j.microrel.2015.06.010

Cite this

@article{8c87e64a9bd14cfa9c32de3ea3d9d4c5,

title = "High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications",

author = "C. Fleury and M. Capriotti and M. Rigato and O. Hilt and J. W{\"u}rfl and J. Derluyn and S. Steinhauer and A. K{\"o}ck and G. Strasser and D. Pogany",

year = "2015",

doi = "10.1016/j.microrel.2015.06.010",

language = "undefiniert/unbekannt",

}

TY - JOUR

T1 - High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

AU - Fleury, C.

AU - Capriotti, M.

AU - Rigato, M.

AU - Hilt, O.

AU - Würfl, J.

AU - Derluyn, J.

AU - Steinhauer, S.

AU - Köck, A.

AU - Strasser, G.

AU - Pogany, D.

PY - 2015

Y1 - 2015

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84943452515&partnerID=MN8TOARS

U2 - 10.1016/j.microrel.2015.06.010

DO - 10.1016/j.microrel.2015.06.010

M3 - Artikel

SN - 0026-2714

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Access to Document

Other files and links

Cite this