High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleury; M. Capriotti; M. Rigato; O. Hilt; J. Würfl; J. Derluyn; S. Steinhauer; A. Köck; G. Strasser; D. Pogany

doi:10.1016/j.microrel.2015.06.010

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleury, M. Capriotti, M. Rigato, O. Hilt, J. Würfl, J. Derluyn, S. Steinhauer, A. Köck, G. Strasser, D. Pogany

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	undefiniert/unbekannt
Fachzeitschrift	Microelectronics Reliability
DOIs	https://doi.org/10.1016/j.microrel.2015.06.010
Publikationsstatus	Veröffentlicht - 2015

Zugriff auf Dokument

10.1016/j.microrel.2015.06.010

Andere Dateien und Links

http://www.scopus.com/inward/record.url?eid=2-s2.0-84943452515&partnerID=MN8TOARS

Dieses zitieren

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title = "High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications",

author = "C. Fleury and M. Capriotti and M. Rigato and O. Hilt and J. W{\"u}rfl and J. Derluyn and S. Steinhauer and A. K{\"o}ck and G. Strasser and D. Pogany",

year = "2015",

doi = "10.1016/j.microrel.2015.06.010",

language = "undefiniert/unbekannt",

}

TY - JOUR

T1 - High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

AU - Fleury, C.

AU - Capriotti, M.

AU - Rigato, M.

AU - Hilt, O.

AU - Würfl, J.

AU - Derluyn, J.

AU - Steinhauer, S.

AU - Köck, A.

AU - Strasser, G.

AU - Pogany, D.

PY - 2015

Y1 - 2015

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84943452515&partnerID=MN8TOARS

U2 - 10.1016/j.microrel.2015.06.010

DO - 10.1016/j.microrel.2015.06.010

M3 - Artikel

SN - 0026-2714

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -