Fully Printed GaTe Based Photodetector on PET Substrate

Layered III-VI monochalcogenides such as gallium telluride (GaTe) and indium selenide (InSe) have positioned themselves for high-performance optoelectronics including radiation detectors and solar cells due to the optimum band gap as a solar window material and as semi-insulating at room temperature. The unique crystal structure of GaTe induces interesting consequences on the band structure and hence the optical and electronic characteristics, such as direct band gap and strong excitonic absorption. However, the fabrication of the photo detectors using these materials on flexible substrates employing printing technologies owing to the cost effective, fast, and easy production properties is of keen interest. In this work, we utilize screen printing and slide dye coating technologies to fabricate a photodetector based on solution-processed GaTe on PET sheets.