Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al<inf>2</inf>O<inf>3</inf> in AlGaN/GaN high electron mobility transistors with normally off capability

M. Capriotti; A. Alexewicz; C. Fleury; M. Gavagnin; O. Bethge; D. Visalli; J. Derluyn; H.D. Wanzenböck; E. Bertagnolli; D. Pogany; G. Strasser

doi:10.1063/1.4868531

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al<inf>2</inf>O<inf>3</inf> in AlGaN/GaN high electron mobility transistors with normally off capability

M. Capriotti, A. Alexewicz, C. Fleury, M. Gavagnin, O. Bethge, D. Visalli, J. Derluyn, H.D. Wanzenböck, E. Bertagnolli, D. Pogany, G. Strasser

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.4868531
Publication status	Published - 2014

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Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Visalli, D., Derluyn, J., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., & Strasser, G. (2014). Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al<inf>2</inf>O<inf>3</inf> in AlGaN/GaN high electron mobility transistors with normally off capability. Applied Physics Letters. https://doi.org/10.1063/1.4868531

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title = "Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability",

author = "M. Capriotti and A. Alexewicz and C. Fleury and M. Gavagnin and O. Bethge and D. Visalli and J. Derluyn and H.D. Wanzenb{\"o}ck and E. Bertagnolli and D. Pogany and G. Strasser",

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doi = "10.1063/1.4868531",

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Capriotti, M, Alexewicz, A, Fleury, C, Gavagnin, M, Bethge, O, Visalli, D, Derluyn, J, Wanzenböck, HD, Bertagnolli, E, Pogany, D & Strasser, G 2014, 'Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al<inf>2</inf>O<inf>3</inf> in AlGaN/GaN high electron mobility transistors with normally off capability', Applied Physics Letters. https://doi.org/10.1063/1.4868531

TY - JOUR

T1 - Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

AU - Capriotti, M.

AU - Alexewicz, A.

AU - Fleury, C.

AU - Gavagnin, M.

AU - Bethge, O.

AU - Visalli, D.

AU - Derluyn, J.

AU - Wanzenböck, H.D.

AU - Bertagnolli, E.

AU - Pogany, D.

AU - Strasser, G.

PY - 2014

Y1 - 2014

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84897889404&partnerID=MN8TOARS

U2 - 10.1063/1.4868531

DO - 10.1063/1.4868531

M3 - Artikel

SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al<inf>2</inf>O<inf>3</inf> in AlGaN/GaN high electron mobility transistors with normally off capability

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