Fabrication and characterization of sub-μm magnetic cells for embedded front-end MRAM

T. Dimopoulos; J. Schotter; T. Uhrmann; N. Wiese; R. Heer; C. Stepper; M. Kast; H. Brückl

doi:10.1016/j.jmmm.2007.03.149

Fabrication and characterization of sub-μm magnetic cells for embedded front-end MRAM

T. Dimopoulos, J. Schotter, T. Uhrmann, N. Wiese, R. Heer, C. Stepper, M. Kast, H. Brückl

Research output: Contribution to journal › Article › peer-review

Abstract

In this work we study the magnetic properties of 4-nm-thick permalloy films deposited into flat elliptical holes with an aspect ratio of 2:1 and short axis ranging from 2000 down to 70 nm. The holes are patterned into 50- and 200-nm-thick SiO2 dielectric by e-beam lithography. The magnetization switching characteristics of the embedded magnetic elements were probed by localized magneto-optical Kerr effect and magnetic force microscopy measurements. It is shown that the switching mode, field and distribution depend on the hole depth and very strongly on the element's size, especially when the short axis shrinks below 100 nm. The results are compared with micromagnetic simulations. © 2007 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	e948-e952
Journal	Journal of Magnetism and Magnetic Materials
Volume	316
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2007.03.149
Publication status	Published - 2007
Externally published	Yes

Keywords

Fabrication
Intermetallics
Magnetic force microscopy
Magnetic permeability
Magnetization reversal
Embedded magnetic elements
Magnetic cells
Magnetization switching
Permalloy
Random access storage

Access to Document

10.1016/j.jmmm.2007.03.149

https://www.scopus.com/inward/record.uri?eid=2-s2.0-34250357131&doi=10.1016%2fj.jmmm.2007.03.149&partnerID=40&md5=4e33a295eefcac5a80056172c8b808d6

Cite this

@article{f0cf68b721a84aa7a89f18c46efaaa1d,

title = "Fabrication and characterization of sub-μm magnetic cells for embedded front-end MRAM",

abstract = "In this work we study the magnetic properties of 4-nm-thick permalloy films deposited into flat elliptical holes with an aspect ratio of 2:1 and short axis ranging from 2000 down to 70 nm. The holes are patterned into 50- and 200-nm-thick SiO2 dielectric by e-beam lithography. The magnetization switching characteristics of the embedded magnetic elements were probed by localized magneto-optical Kerr effect and magnetic force microscopy measurements. It is shown that the switching mode, field and distribution depend on the hole depth and very strongly on the element's size, especially when the short axis shrinks below 100 nm. The results are compared with micromagnetic simulations. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "Fabrication, Intermetallics, Magnetic force microscopy, Magnetic permeability, Magnetization reversal, Embedded magnetic elements, Magnetic cells, Magnetization switching, Permalloy, Random access storage",

author = "T. Dimopoulos and J. Schotter and T. Uhrmann and N. Wiese and R. Heer and C. Stepper and M. Kast and H. Br{\"u}ckl",

note = "cited By 0",

year = "2007",

doi = "10.1016/j.jmmm.2007.03.149",

language = "English",

volume = "316",

pages = "e948--e952",

number = "2 SPEC. ISS.",

}

TY - JOUR

T1 - Fabrication and characterization of sub-μm magnetic cells for embedded front-end MRAM

AU - Dimopoulos, T.

AU - Schotter, J.

AU - Uhrmann, T.

AU - Wiese, N.

AU - Heer, R.

AU - Stepper, C.

AU - Kast, M.

AU - Brückl, H.

N1 - cited By 0

PY - 2007

Y1 - 2007

N2 - In this work we study the magnetic properties of 4-nm-thick permalloy films deposited into flat elliptical holes with an aspect ratio of 2:1 and short axis ranging from 2000 down to 70 nm. The holes are patterned into 50- and 200-nm-thick SiO2 dielectric by e-beam lithography. The magnetization switching characteristics of the embedded magnetic elements were probed by localized magneto-optical Kerr effect and magnetic force microscopy measurements. It is shown that the switching mode, field and distribution depend on the hole depth and very strongly on the element's size, especially when the short axis shrinks below 100 nm. The results are compared with micromagnetic simulations. © 2007 Elsevier B.V. All rights reserved.

AB - In this work we study the magnetic properties of 4-nm-thick permalloy films deposited into flat elliptical holes with an aspect ratio of 2:1 and short axis ranging from 2000 down to 70 nm. The holes are patterned into 50- and 200-nm-thick SiO2 dielectric by e-beam lithography. The magnetization switching characteristics of the embedded magnetic elements were probed by localized magneto-optical Kerr effect and magnetic force microscopy measurements. It is shown that the switching mode, field and distribution depend on the hole depth and very strongly on the element's size, especially when the short axis shrinks below 100 nm. The results are compared with micromagnetic simulations. © 2007 Elsevier B.V. All rights reserved.

KW - Fabrication

KW - Intermetallics

KW - Magnetic force microscopy

KW - Magnetic permeability

KW - Magnetization reversal

KW - Embedded magnetic elements

KW - Magnetic cells

KW - Magnetization switching

KW - Permalloy

KW - Random access storage

U2 - 10.1016/j.jmmm.2007.03.149

DO - 10.1016/j.jmmm.2007.03.149

M3 - Article

SN - 0304-8853

VL - 316

SP - e948-e952

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SPEC. ISS.

ER -

Fabrication and characterization of sub-μm magnetic cells for embedded front-end MRAM

Abstract

Keywords

Access to Document

Fingerprint

Cite this