Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

M. Capriotti; E. Bahat Treidel; C. Fleury; O. Bethge; C. Ostermaier; M. Rigato; S.L.C. Lancaster; F. Brunner; H. Detz; O. Hilt; J. Würfl; D. Pogany; G. Strasser

doi:10.1016/j.sse.2016.07.009

Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

M. Capriotti, E. Bahat Treidel, C. Fleury, O. Bethge, C. Ostermaier, M. Rigato, S.L.C. Lancaster, F. Brunner, H. Detz, O. Hilt, J. Würfl, D. Pogany, G. Strasser

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Solid-State Electronics
DOIs	https://doi.org/10.1016/j.sse.2016.07.009
Publication status	Published - 2016

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10.1016/j.sse.2016.07.009

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Capriotti, M., Bahat Treidel, E., Fleury, C., Bethge, O., Ostermaier, C., Rigato, M., Lancaster, S. L. C., Brunner, F., Detz, H., Hilt, O., Würfl, J., Pogany, D., & Strasser, G. (2016). Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. Solid-State Electronics. https://doi.org/10.1016/j.sse.2016.07.009

@article{52b51c489b534d81a44769d6ea1e208e,

title = "Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors",

author = "M. Capriotti and {Bahat Treidel}, E. and C. Fleury and O. Bethge and C. Ostermaier and M. Rigato and S.L.C. Lancaster and F. Brunner and H. Detz and O. Hilt and J. W{\"u}rfl and D. Pogany and G. Strasser",

year = "2016",

doi = "10.1016/j.sse.2016.07.009",

language = "undefiniert/unbekannt",

}

Capriotti, M, Bahat Treidel, E, Fleury, C, Bethge, O, Ostermaier, C, Rigato, M, Lancaster, SLC, Brunner, F, Detz, H, Hilt, O, Würfl, J, Pogany, D & Strasser, G 2016, 'Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors', Solid-State Electronics. https://doi.org/10.1016/j.sse.2016.07.009

TY - JOUR

T1 - Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

AU - Capriotti, M.

AU - Bahat Treidel, E.

AU - Fleury, C.

AU - Bethge, O.

AU - Ostermaier, C.

AU - Rigato, M.

AU - Lancaster, S.L.C.

AU - Brunner, F.

AU - Detz, H.

AU - Hilt, O.

AU - Würfl, J.

AU - Pogany, D.

AU - Strasser, G.

PY - 2016

Y1 - 2016

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84992573751&partnerID=MN8TOARS

U2 - 10.1016/j.sse.2016.07.009

DO - 10.1016/j.sse.2016.07.009

M3 - Artikel

SN - 0038-1101

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

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