E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

M Capriotti; C Fleury; O Bethge; M Rigato; S Lancaster; D Pogany; G Strasser; E Bahat-Treidel; O.H.F Brunner; J Wurfl

doi:10.1109/ESSDERC.2015.7324713

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

M Capriotti, C Fleury, O Bethge, M Rigato, S Lancaster, D Pogany, G Strasser, E Bahat-Treidel, O.H.F Brunner, J Wurfl

Research output: Contribution to conference (No Proceedings) › Paper

Abstract

We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. © 2015 IEEE.

Original language	Undefined/Unknown
Pages	60-63
DOIs	https://doi.org/10.1109/ESSDERC.2015.7324713
Publication status	Published - 1 Nov 2015

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10.1109/ESSDERC.2015.7324713

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Cite this

@conference{9d06ab6aa29242d9b301f45f0bb101cf,

title = "E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator",

abstract = "We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. {\textcopyright} 2015 IEEE.",

author = "M Capriotti and C Fleury and O Bethge and M Rigato and S Lancaster and D Pogany and G Strasser and E Bahat-Treidel and O.H.F Brunner and J Wurfl",

note = "cited By 1",

year = "2015",

month = nov,

day = "1",

doi = "10.1109/ESSDERC.2015.7324713",

language = "undefiniert/unbekannt",

pages = "60--63",

}

TY - CONF

T1 - E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

AU - Capriotti, M

AU - Fleury, C

AU - Bethge, O

AU - Rigato, M

AU - Lancaster, S

AU - Pogany, D

AU - Strasser, G

AU - Bahat-Treidel, E

AU - Brunner, O.H.F

AU - Wurfl, J

N1 - cited By 1

PY - 2015/11/1

Y1 - 2015/11/1

N2 - We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. © 2015 IEEE.

AB - We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. © 2015 IEEE.

U2 - 10.1109/ESSDERC.2015.7324713

DO - 10.1109/ESSDERC.2015.7324713

M3 - Papier

SP - 60

EP - 63

ER -