E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

M Capriotti; C Fleury; O Bethge; M Rigato; S Lancaster; D Pogany; G Strasser; E Bahat-Treidel; O.H.F Brunner; J Wurfl

doi:10.1109/ESSDERC.2015.7324713

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

M Capriotti, C Fleury, O Bethge, M Rigato, S Lancaster, D Pogany, G Strasser, E Bahat-Treidel, O.H.F Brunner, J Wurfl

Publikation: Konferenzbeitrag › Papier

Abstract

We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. © 2015 IEEE.

Originalsprache	undefiniert/unbekannt
Seiten	60-63
DOIs	https://doi.org/10.1109/ESSDERC.2015.7324713
Publikationsstatus	Veröffentlicht - 1 Nov. 2015

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10.1109/ESSDERC.2015.7324713

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959353226&doi=10.1109%2fESSDERC.2015.7324713&partnerID=40&md5=229c393a12edf8409e298d1b84077d60

Dieses zitieren

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abstract = "We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. {\textcopyright} 2015 IEEE.",

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AU - Capriotti, M

AU - Fleury, C

AU - Bethge, O

AU - Rigato, M

AU - Lancaster, S

AU - Pogany, D

AU - Strasser, G

AU - Bahat-Treidel, E

AU - Brunner, O.H.F

AU - Wurfl, J

N1 - cited By 1

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Y1 - 2015/11/1

N2 - We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. © 2015 IEEE.

AB - We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications. © 2015 IEEE.

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