Original language | Undefined/Unknown |
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Publication status | Published - 1 Jun 2014 |
Different layer designs for normally-off GaN HEMTs with ultrathin AlN barrier, GaN cap and in situ SiN passivation
M. Capriotti, A. Alexewicz, C. Fleury, J. Derluyn, D. Visalli, D. Pogany, G. Strasser
Research output: Contribution to conference (No Proceedings) › Paper