Different layer designs for normally-off GaN HEMTs with ultrathin AlN barrier, GaN cap and in situ SiN passivation

M. Capriotti, A. Alexewicz, C. Fleury, J. Derluyn, D. Visalli, D. Pogany, G. Strasser

Publikation: Konferenzbeitrag › Papier

Originalsprache	undefiniert/unbekannt
Publikationsstatus	Veröffentlicht - 1 Juni 2014

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@conference{658139ef4e5f4d4ca04864e3f304d4f9,

title = "Different layer designs for normally-off GaN HEMTs with ultrathin AlN barrier, GaN cap and in situ SiN passivation",

author = "M. Capriotti and A. Alexewicz and C. Fleury and J. Derluyn and D. Visalli and D. Pogany and G. Strasser",

year = "2014",

month = jun,

day = "1",

language = "undefiniert/unbekannt",

}