Determination of stress in silicon wafers using Raman spectroscopy

M. De Biasio, L. Neumaier, N. Vollert, E. Geier, M. Roesner, Ch. Hirschl, M. Kraft

Research output: Conference proceeding/Chapter in Book/Report/Conference Paperpeer-review

Original languageEnglish
Title of host publicationNext-Generation Spectroscopic Technologies VIII
EditorsMark A. Druy, Richard A. Crocombe, David P. Bannon
Pages142 - 147
Volume9482
Publication statusPublished - 2015

Keywords

  • Raman
  • stress
  • silicon
  • processing
  • spectroscopy

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