Determination of stress in silicon wafers using Raman spectroscopy

M. De Biasio, L. Neumaier, N. Vollert, E. Geier, M. Roesner, Ch. Hirschl, M. Kraft

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Originalsprache	Englisch
Titel	Next-Generation Spectroscopic Technologies VIII
Redakteure/-innen	Mark A. Druy, Richard A. Crocombe, David P. Bannon
Seiten	142 - 147
Band	9482
Publikationsstatus	Veröffentlicht - 2015

Zugriff auf Dokument

@inproceedings{e78f31deb4d84c48bcaf94d3494677b9,

title = "Determination of stress in silicon wafers using Raman spectroscopy",

keywords = "Raman, stress, silicon, processing, spectroscopy",

author = "Biasio, {M. De} and L. Neumaier and N. Vollert and E. Geier and M. Roesner and Ch. Hirschl and M. Kraft",

year = "2015",

language = "English",

volume = "9482",

pages = "142 -- 147",

editor = "Druy, {Mark A.} and Crocombe, {Richard A.} and Bannon, {David P.}",

booktitle = "Next-Generation Spectroscopic Technologies VIII",

}

TY - GEN

T1 - Determination of stress in silicon wafers using Raman spectroscopy

AU - Biasio, M. De

AU - Neumaier, L.

AU - Vollert, N.

AU - Geier, E.

AU - Roesner, M.

AU - Hirschl, Ch.

AU - Kraft, M.

PY - 2015

Y1 - 2015

KW - Raman

KW - stress

KW - silicon

KW - processing

KW - spectroscopy

M3 - Conference Paper

VL - 9482

SP - 142

EP - 147

BT - Next-Generation Spectroscopic Technologies VIII

A2 - Druy, Mark A.

A2 - Crocombe, Richard A.

A2 - Bannon, David P.

ER -