Change of electrical properties of rutile- and anatase-TiO<inf>2</inf> films by atomic layer deposited Al<inf>2</inf>O<inf>3</inf>

T. Nabatame, I. Yamamoto, T. Sawada, A. Ohi, T.D. Dao, T. Ohishi, T. Nagao

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

Access to Document

@inproceedings{09b0a1d2bbf041a1a62fe9e2c7e23d04,

title = "Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3",

author = "T. Nabatame and I. Yamamoto and T. Sawada and A. Ohi and T.D. Dao and T. Ohishi and T. Nagao",

year = "2019",

doi = "10.1149/09203.0015ecst",

language = "undefiniert/unbekannt",

isbn = "19385862 19386737",

booktitle = "ECS Transactions",

}

TY - GEN

T1 - Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3

AU - Nabatame, T.

AU - Yamamoto, I.

AU - Sawada, T.

AU - Ohi, A.

AU - Dao, T.D.

AU - Ohishi, T.

AU - Nagao, T.

PY - 2019

Y1 - 2019

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85077217572&partnerID=MN8TOARS

U2 - 10.1149/09203.0015ecst

DO - 10.1149/09203.0015ecst

M3 - Konferenzartikel

SN - 19385862 19386737

BT - ECS Transactions

ER -