An ESD-protection-free monolithic harmonic filter for WLAN applications

Jingfeng Ding; Andreas Springer; Thomas Bartl; Gernot Hueber; Richard Hagelauer

doi:10.1109/SMIC.2010.5422971

An ESD-protection-free monolithic harmonic filter for WLAN applications

Jingfeng Ding, Andreas Springer, Thomas Bartl, Gernot Hueber, Richard Hagelauer

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

Abstract

Modern multi-band and multi-mode handheld wireless devices require novel approaches for the integration of passive elements into the radio front-end. In this paper, we present the design of an electrostatic discharge (ESD)-protection-free harmonic filter using an improved high-resistivity silicon copper technology for the monolithic integration of active and passive devices. Typical metal-isolator-metal (MIM) capacitors are replaced by inter-digital metal capacitors which provide a high breakdown voltage of up to 800 V. As the machine-mode ESD voltage is lower than 500 V, this filter can operate without ESD protection. In this design, electromagnetic (EM) simulation was used extensively for inductor and filter optimization. The fabricated device has an insertion loss of less than 0.3 dB and 2^nd and 3^rd harmonic attenuations of more than 30 dB for the WLAN 2.4 GHz frequency band and features a size of 0.75×0.67 mm².

Original language	English
Title of host publication	2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Publisher	IEEE Computer Society
Pages	228-231
Number of pages	4
ISBN (Print)	978-1-4244-5458-7
DOIs	https://doi.org/10.1109/SMIC.2010.5422971
Publication status	Published - 13 Jan 2010
Externally published	Yes
Event	2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - New Orleans, LA, USA Duration: 11 Jan 2010 → 13 Jan 2010

Conference

Conference	2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Period	11/01/10 → 13/01/10

Keywords

Harmonic filters
Wireless LAN
Electrostatic discharge
MIM capacitors
Silicon
Copper
Monolithic integrated circuits
Breakdown voltage
Protection
Electromagnetic induction

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10.1109/SMIC.2010.5422971

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5422971

Cite this

@inproceedings{e1662871ebe44009a40ad64c49d03afb,

title = "An ESD-protection-free monolithic harmonic filter for WLAN applications",

abstract = "Modern multi-band and multi-mode handheld wireless devices require novel approaches for the integration of passive elements into the radio front-end. In this paper, we present the design of an electrostatic discharge (ESD)-protection-free harmonic filter using an improved high-resistivity silicon copper technology for the monolithic integration of active and passive devices. Typical metal-isolator-metal (MIM) capacitors are replaced by inter-digital metal capacitors which provide a high breakdown voltage of up to 800 V. As the machine-mode ESD voltage is lower than 500 V, this filter can operate without ESD protection. In this design, electromagnetic (EM) simulation was used extensively for inductor and filter optimization. The fabricated device has an insertion loss of less than 0.3 dB and 2nd and 3rd harmonic attenuations of more than 30 dB for the WLAN 2.4 GHz frequency band and features a size of 0.75×0.67 mm2.",

keywords = "Harmonic filters, Wireless LAN, Electrostatic discharge, MIM capacitors, Silicon, Copper, Monolithic integrated circuits, Breakdown voltage, Protection, Electromagnetic induction",

author = "Jingfeng Ding and Andreas Springer and Thomas Bartl and Gernot Hueber and Richard Hagelauer",

year = "2010",

month = jan,

day = "13",

doi = "10.1109/SMIC.2010.5422971",

language = "English",

isbn = "978-1-4244-5458-7",

pages = "228--231",

booktitle = "2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)",

publisher = "IEEE Computer Society",

address = "United States",

note = "2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ; Conference date: 11-01-2010 Through 13-01-2010",

}

Ding, J, Springer, A, Bartl, T, Hueber, G & Hagelauer, R 2010, An ESD-protection-free monolithic harmonic filter for WLAN applications. in 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)., 5422971, IEEE Computer Society, pp. 228-231, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 11/01/10. https://doi.org/10.1109/SMIC.2010.5422971

TY - GEN

T1 - An ESD-protection-free monolithic harmonic filter for WLAN applications

AU - Ding, Jingfeng

AU - Springer, Andreas

AU - Bartl, Thomas

AU - Hueber, Gernot

AU - Hagelauer, Richard

PY - 2010/1/13

Y1 - 2010/1/13

N2 - Modern multi-band and multi-mode handheld wireless devices require novel approaches for the integration of passive elements into the radio front-end. In this paper, we present the design of an electrostatic discharge (ESD)-protection-free harmonic filter using an improved high-resistivity silicon copper technology for the monolithic integration of active and passive devices. Typical metal-isolator-metal (MIM) capacitors are replaced by inter-digital metal capacitors which provide a high breakdown voltage of up to 800 V. As the machine-mode ESD voltage is lower than 500 V, this filter can operate without ESD protection. In this design, electromagnetic (EM) simulation was used extensively for inductor and filter optimization. The fabricated device has an insertion loss of less than 0.3 dB and 2nd and 3rd harmonic attenuations of more than 30 dB for the WLAN 2.4 GHz frequency band and features a size of 0.75×0.67 mm2.

AB - Modern multi-band and multi-mode handheld wireless devices require novel approaches for the integration of passive elements into the radio front-end. In this paper, we present the design of an electrostatic discharge (ESD)-protection-free harmonic filter using an improved high-resistivity silicon copper technology for the monolithic integration of active and passive devices. Typical metal-isolator-metal (MIM) capacitors are replaced by inter-digital metal capacitors which provide a high breakdown voltage of up to 800 V. As the machine-mode ESD voltage is lower than 500 V, this filter can operate without ESD protection. In this design, electromagnetic (EM) simulation was used extensively for inductor and filter optimization. The fabricated device has an insertion loss of less than 0.3 dB and 2nd and 3rd harmonic attenuations of more than 30 dB for the WLAN 2.4 GHz frequency band and features a size of 0.75×0.67 mm2.

KW - Harmonic filters

KW - Wireless LAN

KW - Electrostatic discharge

KW - MIM capacitors

KW - Silicon

KW - Copper

KW - Monolithic integrated circuits

KW - Breakdown voltage

KW - Protection

KW - Electromagnetic induction

UR - https://ieeexplore.ieee.org/document/5422971/

U2 - 10.1109/SMIC.2010.5422971

DO - 10.1109/SMIC.2010.5422971

M3 - Conference Paper

SN - 978-1-4244-5458-7

SP - 228

EP - 231

BT - 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

PB - IEEE Computer Society

T2 - 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Y2 - 11 January 2010 through 13 January 2010

ER -

An ESD-protection-free monolithic harmonic filter for WLAN applications

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Keywords

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