An ESD-protection-free monolithic harmonic filter for WLAN applications

Jingfeng Ding, Andreas Springer, Thomas Bartl, Gernot Hueber, Richard Hagelauer

Publikation: Konferenzband/Beitrag in Buch/BerichtKonferenzartikelBegutachtung

Abstract

Modern multi-band and multi-mode handheld wireless devices require novel approaches for the integration of passive elements into the radio front-end. In this paper, we present the design of an electrostatic discharge (ESD)-protection-free harmonic filter using an improved high-resistivity silicon copper technology for the monolithic integration of active and passive devices. Typical metal-isolator-metal (MIM) capacitors are replaced by inter-digital metal capacitors which provide a high breakdown voltage of up to 800 V. As the machine-mode ESD voltage is lower than 500 V, this filter can operate without ESD protection. In this design, electromagnetic (EM) simulation was used extensively for inductor and filter optimization. The fabricated device has an insertion loss of less than 0.3 dB and 2nd and 3rd harmonic attenuations of more than 30 dB for the WLAN 2.4 GHz frequency band and features a size of 0.75×0.67 mm2.
OriginalspracheEnglisch
Titel2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Herausgeber (Verlag)IEEE Computer Society
Seiten228-231
Seitenumfang4
ISBN (Print)978-1-4244-5458-7
DOIs
PublikationsstatusVeröffentlicht - 13 Jän. 2010
Extern publiziertJa
Veranstaltung2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - New Orleans, LA, USA
Dauer: 11 Jän. 201013 Jän. 2010

Konferenz

Konferenz2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Zeitraum11/01/1013/01/10

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