A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements

Thomas Moldaschl; Stefan Woetzel; Maurizio Galvano; Christoph Mayer; Herbert Hackl; Alfred Binder

doi:10.1109/SPEC55080.2022.10058290

A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements

Thomas Moldaschl, Stefan Woetzel, Maurizio Galvano, Christoph Mayer, Herbert Hackl, Alfred Binder

Research output: Conference proceeding/Chapter in Book/Report/ › Conference Paper › peer-review

Abstract

The parasitic inductances, resistances and capacitances of power transistor packages play a vital role in power transistor applications. They lead to increased switching losses and longer switching transients, which is why it is pivotal to accurately assess these values. We present a new way of fitting these values from two-port S-parameter measurements. The result is a fully automated method with low computational effort and good accuracy. In this study 2 different packages have been investigated which were supplied by Infineon. The transistors were mounted on a specially designed PCB and measured with a network analyzer. The corresponding S-parameter files were then fed into a Matlab script which computed the reconstruction method. Furthermore, the effort and accuracy of this estimation are compared to other methods found in literature.

Original language	English
Title of host publication	IEEE Annual Southern Power Electronics Conference (SPEC)
DOIs	https://doi.org/10.1109/SPEC55080.2022.10058290
Publication status	Published - 10 Mar 2023

Keywords

Power electronics
S-Parameters
Data Analytics

Access to Document

10.1109/SPEC55080.2022.10058290

Cite this

@inproceedings{ab493604c2354bfd93973268e1d2119c,

title = "A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements",

abstract = "The parasitic inductances, resistances and capacitances of power transistor packages play a vital role in power transistor applications. They lead to increased switching losses and longer switching transients, which is why it is pivotal to accurately assess these values. We present a new way of fitting these values from two-port S-parameter measurements. The result is a fully automated method with low computational effort and good accuracy. In this study 2 different packages have been investigated which were supplied by Infineon. The transistors were mounted on a specially designed PCB and measured with a network analyzer. The corresponding S-parameter files were then fed into a Matlab script which computed the reconstruction method. Furthermore, the effort and accuracy of this estimation are compared to other methods found in literature.",

keywords = "Power electronics, S-Parameters, Data Analytics",

author = "Thomas Moldaschl and Stefan Woetzel and Maurizio Galvano and Christoph Mayer and Herbert Hackl and Alfred Binder",

year = "2023",

month = mar,

day = "10",

doi = "10.1109/SPEC55080.2022.10058290",

language = "English",

booktitle = "IEEE Annual Southern Power Electronics Conference (SPEC)",

}

TY - GEN

T1 - A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements

AU - Moldaschl, Thomas

AU - Woetzel, Stefan

AU - Galvano, Maurizio

AU - Mayer, Christoph

AU - Hackl, Herbert

AU - Binder, Alfred

PY - 2023/3/10

Y1 - 2023/3/10

N2 - The parasitic inductances, resistances and capacitances of power transistor packages play a vital role in power transistor applications. They lead to increased switching losses and longer switching transients, which is why it is pivotal to accurately assess these values. We present a new way of fitting these values from two-port S-parameter measurements. The result is a fully automated method with low computational effort and good accuracy. In this study 2 different packages have been investigated which were supplied by Infineon. The transistors were mounted on a specially designed PCB and measured with a network analyzer. The corresponding S-parameter files were then fed into a Matlab script which computed the reconstruction method. Furthermore, the effort and accuracy of this estimation are compared to other methods found in literature.

AB - The parasitic inductances, resistances and capacitances of power transistor packages play a vital role in power transistor applications. They lead to increased switching losses and longer switching transients, which is why it is pivotal to accurately assess these values. We present a new way of fitting these values from two-port S-parameter measurements. The result is a fully automated method with low computational effort and good accuracy. In this study 2 different packages have been investigated which were supplied by Infineon. The transistors were mounted on a specially designed PCB and measured with a network analyzer. The corresponding S-parameter files were then fed into a Matlab script which computed the reconstruction method. Furthermore, the effort and accuracy of this estimation are compared to other methods found in literature.

KW - Power electronics

KW - S-Parameters

KW - Data Analytics

U2 - 10.1109/SPEC55080.2022.10058290

DO - 10.1109/SPEC55080.2022.10058290

M3 - Conference Paper

BT - IEEE Annual Southern Power Electronics Conference (SPEC)

ER -

A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements

Abstract

Keywords

Access to Document

Fingerprint

Cite this