A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

Sarthak Sharma, Hao Gao, Gernot Hueber, Andrea Mazzanti

Research output: Conference proceeding/Chapter in Book/Report/Conference Paperpeer-review

Abstract

This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.
Original languageEnglish
Title of host publication2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Pages12-13
Number of pages2
DOIs
Publication statusPublished - 17 Jun 2022
Event2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) - Honolulu, HI, USA
Duration: 12 Jun 202217 Jun 2022

Conference

Conference2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Period12/06/2217/06/22

Keywords

  • Phase noise
  • Silicon-on-insulator
  • Very large scale integration
  • Harmonic analysis
  • Topology
  • Magnetic circuits

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