A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

Sarthak Sharma; Hao Gao; Gernot Hueber; Andrea Mazzanti

doi:10.1109/VLSITechnologyandCir46769.2022.9830187

A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

Sarthak Sharma, Hao Gao, Gernot Hueber, Andrea Mazzanti

Millimeter Wave Technologies (mmW)

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.

Originalsprache	Englisch
Titel	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Seiten	12-13
Seitenumfang	2
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830187
Publikationsstatus	Veröffentlicht - 17 Juni 2022
Veranstaltung	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) - Honolulu, HI, USA Dauer: 12 Juni 2022 → 17 Juni 2022

Konferenz

Konferenz	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Zeitraum	12/06/22 → 17/06/22

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10.1109/VLSITechnologyandCir46769.2022.9830187

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9830187

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https://ieeexplore.ieee.org/document/9830187/

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Sharma, S., Gao, H., Hueber, G., & Mazzanti, A. (2022). A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction. in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (S. 12-13). Artikel 9830187 https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830187

@inproceedings{1db56df61afe452a9b17b18d47813536,

title = "A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction",

abstract = "This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.",

keywords = "Phase noise, Silicon-on-insulator, Very large scale integration, Harmonic analysis, Topology, Magnetic circuits",

author = "Sarthak Sharma and Hao Gao and Gernot Hueber and Andrea Mazzanti",

year = "2022",

month = jun,

day = "17",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830187",

language = "English",

isbn = "978-1-6654-9773-2",

pages = "12--13",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)",

note = "2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ; Conference date: 12-06-2022 Through 17-06-2022",

}

Sharma, S, Gao, H, Hueber, G & Mazzanti, A 2022, A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction. in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)., 9830187, S. 12-13, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 12/06/22. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830187

A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction. / Sharma, Sarthak; Gao, Hao; Hueber, Gernot et al.
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022. S. 12-13 9830187.

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

TY - GEN

T1 - A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

AU - Sharma, Sarthak

AU - Gao, Hao

AU - Hueber, Gernot

AU - Mazzanti, Andrea

PY - 2022/6/17

Y1 - 2022/6/17

N2 - This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.

AB - This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.

KW - Phase noise

KW - Silicon-on-insulator

KW - Very large scale integration

KW - Harmonic analysis

KW - Topology

KW - Magnetic circuits

UR - https://ieeexplore.ieee.org/document/9830187/

U2 - 10.1109/VLSITechnologyandCir46769.2022.9830187

DO - 10.1109/VLSITechnologyandCir46769.2022.9830187

M3 - Conference Paper

SN - 978-1-6654-9773-2

SP - 12

EP - 13

BT - 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

T2 - 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Y2 - 12 June 2022 through 17 June 2022

ER -

A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

Abstract

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