Abstract
This letter presents an integrated Doherty power amplifier (PA) in 0.25-μm GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an output power of 36 ± 0.5 dBm between 13.7 and 15.3 GHz, while at 14.6 GHz, it shows a 6-dB output back-off efficiency higher than 28%. Modulated signal measurements applying digital predistortion demonstrate the compatibility of the amplifier with point-to-point radio requirements. To the best of our knowledge, this PA has the highest back-off efficiency for the 15-GHz band, and is the first GaN Doherty in the Ku-band.
Original language | English |
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Article number | 7884978 |
Pages (from-to) | 365-367 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 27 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Apr 2017 |
Externally published | Yes |
Keywords
- MMICs
- Gallium nitride
- Power generation
- Gain
- Microwave circuits
- Predistortion