TY - JOUR
T1 - A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications
AU - Quaglia, Roberto
AU - Camarchia, Vittorio
AU - Moreno Rubio, Jorge Julian
AU - Pirola, Marco
AU - Ghione, Giovanni
PY - 2017/4/1
Y1 - 2017/4/1
N2 - This letter presents an integrated Doherty power amplifier (PA) in 0.25-μm GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an output power of 36 ± 0.5 dBm between 13.7 and 15.3 GHz, while at 14.6 GHz, it shows a 6-dB output back-off efficiency higher than 28%. Modulated signal measurements applying digital predistortion demonstrate the compatibility of the amplifier with point-to-point radio requirements. To the best of our knowledge, this PA has the highest back-off efficiency for the 15-GHz band, and is the first GaN Doherty in the Ku-band.
AB - This letter presents an integrated Doherty power amplifier (PA) in 0.25-μm GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an output power of 36 ± 0.5 dBm between 13.7 and 15.3 GHz, while at 14.6 GHz, it shows a 6-dB output back-off efficiency higher than 28%. Modulated signal measurements applying digital predistortion demonstrate the compatibility of the amplifier with point-to-point radio requirements. To the best of our knowledge, this PA has the highest back-off efficiency for the 15-GHz band, and is the first GaN Doherty in the Ku-band.
KW - MMICs
KW - Gallium nitride
KW - Power generation
KW - Gain
KW - Microwave circuits
KW - Predistortion
UR - https://ieeexplore.ieee.org/document/7884978/
U2 - 10.1109/LMWC.2017.2678440
DO - 10.1109/LMWC.2017.2678440
M3 - Article
SN - 1558-1764
VL - 27
SP - 365
EP - 367
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 4
M1 - 7884978
ER -