TY - JOUR
T1 - Photoinduced trap generation at the Si-SiO2 interface
AU - Cernusca, M.
AU - Heer, R.
AU - Reider, G.A.
N1 - cited By 20
PY - 1998
Y1 - 1998
N2 - We report on the permanent modification of the second-order nonlinear (SHG) response of the Si-SiO2 interface upon irradiation of oxidized Si(100) and Si(111) samples with femtosecond laser pulses of nanojoule pulse energy at the wavelength of 780 nm (1.6eV). We attribute this effect to a dc-field-induced SH contribution which results from the creation of new oxide traps by a photoinduced damage process. The damage process occurs, with a significantly lower efficiency, also under cw irradiation; the experimental results, however, rule out a thermal origin of the effect as well as a multiphoton effect. © Springer-Verlag 1998.
AB - We report on the permanent modification of the second-order nonlinear (SHG) response of the Si-SiO2 interface upon irradiation of oxidized Si(100) and Si(111) samples with femtosecond laser pulses of nanojoule pulse energy at the wavelength of 780 nm (1.6eV). We attribute this effect to a dc-field-induced SH contribution which results from the creation of new oxide traps by a photoinduced damage process. The damage process occurs, with a significantly lower efficiency, also under cw irradiation; the experimental results, however, rule out a thermal origin of the effect as well as a multiphoton effect. © Springer-Verlag 1998.
KW - Effects
KW - Interfaces (materials)
KW - Laser pulses
KW - Monochromators
KW - Nanojoule pulse energy
KW - Photoinduced trap generation
KW - Second order nonlinear response
KW - Second harmonic generation
U2 - 10.1007/s003400050402
DO - 10.1007/s003400050402
M3 - Article
VL - 66
SP - 367
EP - 370
JO - Applied Physics B: Lasers and Optics
JF - Applied Physics B: Lasers and Optics
IS - 3
ER -