Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan HEMTs On SiC And Si Substrates

C. Fleury; S. Bychikhin; M. Cappriotti; O. Hilt; R. Zhytnytska; J. Würfl; J. Derluyn; D. Visalli; G. Strasser; D. Pogany

Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan HEMTs On SiC And Si Substrates

C. Fleury, S. Bychikhin, M. Cappriotti, O. Hilt, R. Zhytnytska, J. Würfl, J. Derluyn, D. Visalli, G. Strasser, D. Pogany

Publikation: Konferenzbeitrag › Papier

Originalsprache	undefiniert/unbekannt
Seiten	159-160
Publikationsstatus	Veröffentlicht - 1 Mai 2013

Dieses zitieren

@conference{f2d1add49f1d495081ec157c857095be,

title = "Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan HEMTs On SiC And Si Substrates",

author = "C. Fleury and S. Bychikhin and M. Cappriotti and O. Hilt and R. Zhytnytska and J. W{\"u}rfl and J. Derluyn and D. Visalli and G. Strasser and D. Pogany",

year = "2013",

month = may,

day = "1",

language = "undefiniert/unbekannt",

pages = "159--160",

}