k∥ = 0 filtering effects in ballistic electron transport through sub-surface resonant tunneling diodes

Electrons are transferred across an interface between an area of high of and low effective mass and subsequently through a low-dimensional state. Using ballistic electron emission microscopy, this situation is studied on gold-gallium arsenide double barrier resonant tunneling diodes. Results of an extended transfer matrix analysis show that only electrons with zero wave vector parallel to the barriers can be transmitted resonantly.