Abstract
Electrons are transferred across an interface between an area of high of and low effective mass and subsequently through a low-dimensional state. Using ballistic electron emission microscopy, this situation is studied on gold-gallium arsenide double barrier resonant tunneling diodes. Results of an extended transfer matrix analysis show that only electrons with zero wave vector parallel to the barriers can be transmitted resonantly.
Original language | English |
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Pages (from-to) | 187-189 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 272 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1999 |
Externally published | Yes |
Keywords
- Electron emission
- Electron tunneling
- Gold
- Interfaces (materials)
- Matrix algebra
- Semiconducting gallium arsenide
- Vectors
- Ballistic electron emission microscopy (BEEM)
- Extended transfer matrix analysis
- Tunnel diodes