Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

Gudrun Bruckner; Jochen Bardong; René Fachberger; Esko Forsén; David Eisele

doi:10.1109/FREQ.2010.5556280

Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

Gudrun Bruckner, Jochen Bardong, René Fachberger, Esko Forsén, David Eisele

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

Aluminum nitride (AlN) on sapphire is a promising substrate for SAW (surface acoustic wave) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices, several samples of SAW delay lines were fabricated on 2" c-plane (0001) sapphire substrates with 1 μm c-plane AlN layer on top. Time- and frequency responses were recorded during annealing treatments at temperatures up to 850°C and the signals were analyzed afterwards.

Originalsprache	Englisch
Titel	2010 IEEE International Frequency Control Symposium
Seiten	499-502
Seitenumfang	4
DOIs	https://doi.org/10.1109/FREQ.2010.5556280
Publikationsstatus	Veröffentlicht - 4 Juni 2010
Extern publiziert	Ja
Veranstaltung	2010 IEEE International Frequency Control Symposium - Newport Beach, CA, USA Dauer: 1 Juni 2010 → 4 Juni 2010

Konferenz

Konferenz	2010 IEEE International Frequency Control Symposium
Zeitraum	1/06/10 → 4/06/10

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@inproceedings{d43e1ab2b37e4070962aebb89a1adb43,

title = "Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures",

abstract = "Aluminum nitride (AlN) on sapphire is a promising substrate for SAW (surface acoustic wave) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices, several samples of SAW delay lines were fabricated on 2{"} c-plane (0001) sapphire substrates with 1 μm c-plane AlN layer on top. Time- and frequency responses were recorded during annealing treatments at temperatures up to 850°C and the signals were analyzed afterwards.",

keywords = "Temperature measurement, Temperature sensors, Substrates, Delay lines, Delay, Plasma temperature, Electrodes",

author = "Gudrun Bruckner and Jochen Bardong and Ren{\'e} Fachberger and Esko Fors{\'e}n and David Eisele",

year = "2010",

month = jun,

day = "4",

doi = "10.1109/FREQ.2010.5556280",

language = "English",

isbn = "978-1-4244-6400-5",

pages = "499--502",

booktitle = "2010 IEEE International Frequency Control Symposium",

note = "2010 IEEE International Frequency Control Symposium ; Conference date: 01-06-2010 Through 04-06-2010",

}

TY - GEN

T1 - Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

AU - Bruckner, Gudrun

AU - Bardong, Jochen

AU - Fachberger, René

AU - Forsén, Esko

AU - Eisele, David

PY - 2010/6/4

Y1 - 2010/6/4

N2 - Aluminum nitride (AlN) on sapphire is a promising substrate for SAW (surface acoustic wave) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices, several samples of SAW delay lines were fabricated on 2" c-plane (0001) sapphire substrates with 1 μm c-plane AlN layer on top. Time- and frequency responses were recorded during annealing treatments at temperatures up to 850°C and the signals were analyzed afterwards.

AB - Aluminum nitride (AlN) on sapphire is a promising substrate for SAW (surface acoustic wave) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices, several samples of SAW delay lines were fabricated on 2" c-plane (0001) sapphire substrates with 1 μm c-plane AlN layer on top. Time- and frequency responses were recorded during annealing treatments at temperatures up to 850°C and the signals were analyzed afterwards.

KW - Temperature measurement

KW - Temperature sensors

KW - Substrates

KW - Delay lines

KW - Delay

KW - Plasma temperature

KW - Electrodes

UR - https://ieeexplore.ieee.org/document/5556280/

U2 - 10.1109/FREQ.2010.5556280

DO - 10.1109/FREQ.2010.5556280

M3 - Conference Paper

SN - 978-1-4244-6400-5

SP - 499

EP - 502

BT - 2010 IEEE International Frequency Control Symposium

T2 - 2010 IEEE International Frequency Control Symposium

Y2 - 1 June 2010 through 4 June 2010

ER -

Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

Abstract

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