Hybrid BAW/SAW AlN and AlScN thin film resonator

Vladimir Pashchenko; Ramin Matloub; Fazel  Parsapour; Paul Muralt; Sylvain  Ballandras; Ken  Haffner

doi:10.1109/ULTSYM.2016.7728649

Hybrid BAW/SAW AlN and AlScN thin film resonator

Vladimir Pashchenko, Ramin Matloub, Fazel Parsapour, Paul Muralt, Sylvain Ballandras, Ken Haffner

Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung

Abstract

A novel type of hybrid resonator based on BAW transformation into SAW in a ridged layered structure was fabricated and characterized. Bulk waves are excited by micromachined piezoelectric AlScN pillars located on the non-piezoelectric Si and sapphire substrates. The effect of film thickness and etching depth on the electromechanical coupling and velocity dispersion were calculated by finite element simulation. Resonators of various geometries were fabricated. Maximum effective coupling coefficient of 3.8% was achieved with a 3 um thick Al 0.85 Sc 0.15 N film on a sapphire substrate.

Originalsprache	Englisch
Titel	Hybrid BAW/SAW AlN and AlScN thin film resonator
ISBN (elektronisch)	1948-5727
DOIs	https://doi.org/10.1109/ULTSYM.2016.7728649
Publikationsstatus	Veröffentlicht - 3 Nov. 2016
Veranstaltung	2016 IEEE International Ultrasonics Symposium - Tours, Frankreich Dauer: 18 Sep. 2016 → 21 Sep. 2016

Konferenz

Konferenz	2016 IEEE International Ultrasonics Symposium
Kurztitel	IUS
Land/Gebiet	Frankreich
Ort	Tours
Zeitraum	18/09/16 → 21/09/16

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title = "Hybrid BAW/SAW AlN and AlScN thin film resonator",

abstract = "A novel type of hybrid resonator based on BAW transformation into SAW in a ridged layered structure was fabricated and characterized. Bulk waves are excited by micromachined piezoelectric AlScN pillars located on the non-piezoelectric Si and sapphire substrates. The effect of film thickness and etching depth on the electromechanical coupling and velocity dispersion were calculated by finite element simulation. Resonators of various geometries were fabricated. Maximum effective coupling coefficient of 3.8% was achieved with a 3 um thick Al 0.85 Sc 0.15 N film on a sapphire substrate.",

author = "Vladimir Pashchenko and Ramin Matloub and Fazel Parsapour and Paul Muralt and Sylvain Ballandras and Ken Haffner",

year = "2016",

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doi = "10.1109/ULTSYM.2016.7728649",

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T1 - Hybrid BAW/SAW AlN and AlScN thin film resonator

AU - Pashchenko, Vladimir

AU - Matloub, Ramin

AU - Parsapour, Fazel

AU - Muralt, Paul

AU - Ballandras, Sylvain

AU - Haffner, Ken

PY - 2016/11/3

Y1 - 2016/11/3

N2 - A novel type of hybrid resonator based on BAW transformation into SAW in a ridged layered structure was fabricated and characterized. Bulk waves are excited by micromachined piezoelectric AlScN pillars located on the non-piezoelectric Si and sapphire substrates. The effect of film thickness and etching depth on the electromechanical coupling and velocity dispersion were calculated by finite element simulation. Resonators of various geometries were fabricated. Maximum effective coupling coefficient of 3.8% was achieved with a 3 um thick Al 0.85 Sc 0.15 N film on a sapphire substrate.

AB - A novel type of hybrid resonator based on BAW transformation into SAW in a ridged layered structure was fabricated and characterized. Bulk waves are excited by micromachined piezoelectric AlScN pillars located on the non-piezoelectric Si and sapphire substrates. The effect of film thickness and etching depth on the electromechanical coupling and velocity dispersion were calculated by finite element simulation. Resonators of various geometries were fabricated. Maximum effective coupling coefficient of 3.8% was achieved with a 3 um thick Al 0.85 Sc 0.15 N film on a sapphire substrate.

U2 - 10.1109/ULTSYM.2016.7728649

DO - 10.1109/ULTSYM.2016.7728649

M3 - Conference Paper

BT - Hybrid BAW/SAW AlN and AlScN thin film resonator

T2 - 2016 IEEE International Ultrasonics Symposium

Y2 - 18 September 2016 through 21 September 2016

ER -

Hybrid BAW/SAW AlN and AlScN thin film resonator

Abstract

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