ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

M. Rigato, C. Fleury, M. Heer, M. Capriotti, W. Simbürger, D. Pogany

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	undefiniert/unbekannt
Fachzeitschrift	Microelectronics Reliability
DOIs	https://doi.org/10.1016/j.microrel.2015.06.019
Publikationsstatus	Veröffentlicht - 2015

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title = "ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique",

author = "M. Rigato and C. Fleury and M. Heer and M. Capriotti and W. Simb{\"u}rger and D. Pogany",

year = "2015",

doi = "10.1016/j.microrel.2015.06.019",

language = "undefiniert/unbekannt",

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TY - JOUR

T1 - ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

AU - Rigato, M.

AU - Fleury, C.

AU - Heer, M.

AU - Capriotti, M.

AU - Simbürger, W.

AU - Pogany, D.

PY - 2015

Y1 - 2015

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84943451813&partnerID=MN8TOARS

U2 - 10.1016/j.microrel.2015.06.019

DO - 10.1016/j.microrel.2015.06.019

M3 - Artikel

SN - 0026-2714

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -