TY - JOUR
T1 - Ballistic electron emission microscopy on buried GaAs-AlGaAs superlattices
AU - Smoliner, J.
AU - Heer, R.
AU - Strasser, G.
N1 - cited By 0
PY - 1999
Y1 - 1999
N2 - In Ballistic Electron Emission Microscopy, ballistic electrons are injected from a metallic base contact into a semiconductor. In this experiment, the miniband of a GaAs-AlGaAs superlattice is employed as energy filter in order to study the energetic distribution of the ballistic electrons injected into the semiconductor. It is found, that due to the large difference in electron mass between Au and GaAs, parallel momentum conservation leads to considerable electron refraction at the Au-GaAs interface. Moreover, a resonant tunneling structure directly at the sample surface can act as momentum filter for electrons injected at k∥=0.
AB - In Ballistic Electron Emission Microscopy, ballistic electrons are injected from a metallic base contact into a semiconductor. In this experiment, the miniband of a GaAs-AlGaAs superlattice is employed as energy filter in order to study the energetic distribution of the ballistic electrons injected into the semiconductor. It is found, that due to the large difference in electron mass between Au and GaAs, parallel momentum conservation leads to considerable electron refraction at the Au-GaAs interface. Moreover, a resonant tunneling structure directly at the sample surface can act as momentum filter for electrons injected at k∥=0.
KW - Electric contacts
KW - Electron emission
KW - Electron energy levels
KW - Electron microscopy
KW - Electron tunneling
KW - Gold
KW - Interfaces (materials)
KW - Molecular beam epitaxy
KW - Semiconducting aluminum compounds
KW - Semiconducting gallium arsenide
KW - Ballistic electron emission microscopy
KW - Electron mass
KW - Electron refraction
KW - Energy filter
KW - Resonant tunneling structure
KW - Semiconductor superlattices
U2 - 10.1016/S0167-9317(99)00151-3
DO - 10.1016/S0167-9317(99)00151-3
M3 - Article
VL - 47
SP - 69
EP - 71
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1
ER -