Ballistic electron emission microscopy on buried GaAs-AlGaAs superlattices

J. Smoliner, R. Heer, G. Strasser

Research output: Contribution to journalArticlepeer-review

Abstract

In Ballistic Electron Emission Microscopy, ballistic electrons are injected from a metallic base contact into a semiconductor. In this experiment, the miniband of a GaAs-AlGaAs superlattice is employed as energy filter in order to study the energetic distribution of the ballistic electrons injected into the semiconductor. It is found, that due to the large difference in electron mass between Au and GaAs, parallel momentum conservation leads to considerable electron refraction at the Au-GaAs interface. Moreover, a resonant tunneling structure directly at the sample surface can act as momentum filter for electrons injected at k∥=0.
Original languageEnglish
Pages (from-to)69-71
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
Publication statusPublished - 1999
Externally publishedYes

Keywords

  • Electric contacts
  • Electron emission
  • Electron energy levels
  • Electron microscopy
  • Electron tunneling
  • Gold
  • Interfaces (materials)
  • Molecular beam epitaxy
  • Semiconducting aluminum compounds
  • Semiconducting gallium arsenide
  • Ballistic electron emission microscopy
  • Electron mass
  • Electron refraction
  • Energy filter
  • Resonant tunneling structure
  • Semiconductor superlattices

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